Tunneling escape of electrons from a double-barrier structure

The lifetime τ e of an electron occupying the quasibound state in an Al x Ga 1-x As/GaAs doublebarrier structure has been calculated with both the tunneling Hamiltonian approach and the complex eigenvalue method. It is found that τ e is dominated by the barrier width, but is insensitive to the well width and the bias. We have also investigated the effect of the electron-LO-phonon interaction on the dynamics of the electron in the quasibound state