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Competing surface reactions limiting the performance of ion-sensitive field-effect transistors

Authors :
Alexey Tarasov
Christian Schönenberger
Mathias Wipf
Ralph L. Stoop
Steffen Müller
Wangyang Fu
Edwin C. Constable
Iain A. Wright
Michel Calame
Kristine Bedner
Colin J. Martin
Source :
Sensors and Actuators, B: Chemical. 220:500-507
Publication Year :
2015

Abstract

Ion-sensitive field-effect transistors based on silicon nanowires are promising candidates for the detection of chemical and biochemical species. These devices have been established as pH sensors thanks to the large number of surface hydroxyl groups at the gate dielectrics which makes them intrinsically sensitive to protons. To specifically detect species other than protons, the sensor surface needs to be modified. However, the remaining hydroxyl groups after functionalization may still limit the sensor response to the targeted species. Here, we describe the influence of competing reactions on the measured response using a general site-binding model. We investigate the key features of the model with a real sensing example based on gold-coated nanoribbons functionalized with a self-assembled monolayer of calcium-sensitive molecules. We identify the residual pH response as the key parameter limiting the sensor response. The competing effect of pH or any other relevant reaction at the sensor surface has therefore to be included to quantitatively understand the sensor response and prevent misleading interpretations.

Details

Language :
English
Volume :
220
Database :
OpenAIRE
Journal :
Sensors and Actuators, B: Chemical
Accession number :
edsair.doi.dedup.....fd40571668a560338965ba25f2faa8ed