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Molecular beam epitaxy growth and optical properties of AlN nanowires
- Source :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2010, 96 (6), pp.61912. ⟨10.1063/1.3315943⟩, Applied Physics Letters, 2010, 96 (6), pp.61912. ⟨10.1063/1.3315943⟩
- Publication Year :
- 2010
- Publisher :
- HAL CCSD, 2010.
-
Abstract
- Growth of catalyst-free AlN nanowires has been achieved by plasma-assisted molecular beam epitaxy on SiO2/Si (100), by taking advantage of Volmer–Weber growth mode of AlN on amorphous SiO2. Using a combination of high resolution transmission electron microscopy and Raman spectroscopy, it is found that AlN nanowires are completely relaxed, which has been assigned to the compliant character of SiO2. Elastic strain relaxation of AlN nanowires has been further confirmed by photoluminescence experiments, showing in addition that spectra are dominated by near-band edge emission.
- Subjects :
- 010302 applied physics
Materials science
Photoluminescence
Physics and Astronomy (miscellaneous)
business.industry
Analytical chemistry
Nanowire
02 engineering and technology
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
Amorphous solid
symbols.namesake
Nanolithography
0103 physical sciences
symbols
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Optoelectronics
0210 nano-technology
business
High-resolution transmission electron microscopy
Raman spectroscopy
ComputingMilieux_MISCELLANEOUS
Molecular beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2010, 96 (6), pp.61912. ⟨10.1063/1.3315943⟩, Applied Physics Letters, 2010, 96 (6), pp.61912. ⟨10.1063/1.3315943⟩
- Accession number :
- edsair.doi.dedup.....fbadb9675a61d10b92bf75d5157e5dc2
- Full Text :
- https://doi.org/10.1063/1.3315943⟩