Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates

Authors :: Alexey Fedorov
Sergio Bietti
Artur Tuktamyshev
Shiro Tsukamoto
Stefano Sanguinetti
Tuktamyshev, A
Fedorov, A
Bietti, S
Tsukamoto, S
Sanguinetti, S
Source :: Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019), Scientific Reports, Scientific reports (Nature Publishing Group) 9 (2019). doi:10.1038/s41598-019-51161-5, info:cnr-pdr/source/autori:Tuktamyshev A.; Fedorov A.; Bietti S.; Tsukamoto S.; Sanguinetti S./titolo:Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates/doi:10.1038%2Fs41598-019-51161-5/rivista:Scientific reports (Nature Publishing Group)/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:9
Publication Year :: 2019
Publisher :: Nature Publishing Group, 2019.
Abstract: A temperature activated crossover between two nucleation regimes is observed in the behavior of Ga droplet nucleation on vicinal GaAs(111)A substrates with a miscut of 2° towards $$(\bar{1}\bar{1}2)$$ ( 1 ¯ 1 ¯ 2 ) . At low temperature (

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