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Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN
- Source :
- Physical Review X, Vol 9, Iss 3, p 031030 (2019), Physical Review X
- Publication Year :
- 2019
- Publisher :
- American Physical Society, 2019.
-
Abstract
- Since the early 1960s, alloys are commonly grouped into two classes that feature either bound states in the band gap (I) or additional, nondiscrete band states (II). Consequently, one can observe either excitons bound to isoelectronic impurities or the typical band edge emission of a semiconductor that shifts and broadens with rising isoelectronic doping concentration. Microscopic parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain limited to macroscopic assertions. Nonetheless, we present a spectroscopic study on exciton localization in a mixed-crystal alloy (class II) that allows us to access microscopic alloy parameters. In order to illustrate our approach, we study bulk InxGa1-xN epilayers at the onset of alloying (0
- Subjects :
- Materials science
Photoluminescence
Band gap
Exciton
QC1-999
Alloy
General Physics and Astronomy
FOS: Physical sciences
quantum dots
02 engineering and technology
engineering.material
Molecular physics
01 natural sciences
Spectral line
localization
010305 fluids & plasmas
Condensed Matter::Materials Science
Bound state
0103 physical sciences
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
White light
luminescence
Emission spectrum
010306 general physics
isoelectronic impurities
gan films
010302 applied physics
Condensed Matter - Mesoscale and Nanoscale Physics
business.industry
Physics
Doping
bound excitons
temperature
band-gap
021001 nanoscience & nanotechnology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Semiconductor
Quantum dot
optical-transitions
engineering
Optoelectronics
Semiconductor alloys
photoluminescence
0210 nano-technology
business
Luminescence
Subjects
Details
- Language :
- English
- ISSN :
- 21603308
- Volume :
- 9
- Issue :
- 3
- Database :
- OpenAIRE
- Journal :
- Physical Review X
- Accession number :
- edsair.doi.dedup.....f8dfcbea4b293c3652d1dff2a6fd3090