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Non linear optical property of poly(phenylene vinylene) in porous silicon substrates
- Source :
- Physica Status Solidi C-Current Topics in Solid State Physics, Porous Semiconductors-Science and Technology 4th international conference (PSST 2004), Porous Semiconductors-Science and Technology 4th international conference (PSST 2004), Mar 2004, Cullera-Valencia, Spain. pp.3222-3226, ⟨10.1002/pssc.200461123⟩
- Publication Year :
- 2004
- Publisher :
- HAL CCSD, 2004.
-
Abstract
- oral session 6 " Novel Forms & Structures " [O-28]; International audience; We present a new technique to fill porous silicon layers of 5 µm thick with poly(p phenylene vinylene) (PPV), a polymer having high nonlinear coefficient in view of preparing waveguide devices. By analyzing the samples with different optical techniques, we have demonstrated that this method was efficient in filling the substrate within the whole thickness of the porous layer. Furthermore, the nonlinear properties of the polymer was found to be enhanced, which is promising for the use of these structures as waveguides in integrated optic applications.
- Subjects :
- Materials science
Physics::Optics
02 engineering and technology
Substrate (electronics)
010402 general chemistry
Porous silicon
01 natural sciences
law.invention
law
Phenylene
Polymer chemistry
Porous layer
chemistry.chemical_classification
PACS: 78.30.Am
78.66.Sq
81.05.Lg
81.05.Rm
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
business.industry
Nonlinear coefficient
Polymer
021001 nanoscience & nanotechnology
0104 chemical sciences
Nonlinear system
chemistry
Optoelectronics
0210 nano-technology
business
Waveguide
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Physica Status Solidi C-Current Topics in Solid State Physics, Porous Semiconductors-Science and Technology 4th international conference (PSST 2004), Porous Semiconductors-Science and Technology 4th international conference (PSST 2004), Mar 2004, Cullera-Valencia, Spain. pp.3222-3226, ⟨10.1002/pssc.200461123⟩
- Accession number :
- edsair.doi.dedup.....f8aa5853db74d7b4cd232d498c4a120d
- Full Text :
- https://doi.org/10.1002/pssc.200461123⟩