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Sensor High Throughput Screening Using Photocurrent Measurements in Silicon
- Source :
- Procedia Engineering. 47:1195-1198
- Publication Year :
- 2012
- Publisher :
- Elsevier BV, 2012.
-
Abstract
- A new high throughput screening method to characterise alloys used as gate metal of Metal/solid Electrolyte/Insulator/Semiconductor (MEIS) gas-sensors was developed. Samples with continuous gradients in alloy concentration for the system Pd 1-x-y Ni y Co y were analysed regarding H2 sensitivity. First results showed reduced poisoning effects of H2S for Ni concentrations between 4-11 at-% in Pd.
- Subjects :
- Photocurrent
Materials science
Silicon
business.industry
High-throughput screening
Alloy
Analytical chemistry
chemistry.chemical_element
Insulator (electricity)
General Medicine
Electrolyte
engineering.material
Metal
Semiconductor
H2 sensor
chemistry
LAPS
visual_art
engineering
visual_art.visual_art_medium
MEIS sensor
ternary alloy
business
Engineering(all)
high throughput screening
Subjects
Details
- ISSN :
- 18777058
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- Procedia Engineering
- Accession number :
- edsair.doi.dedup.....f893947dd0910228d6829092853c0951
- Full Text :
- https://doi.org/10.1016/j.proeng.2012.09.366