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High-Pressure Polymorphs Nucleated and Stabilized by Rational Doping under Ambient Conditions
- Source :
- The Journal of Physical Chemistry. C, Nanomaterials and Interfaces
- Publication Year :
- 2021
- Publisher :
- American Chemical Society (ACS), 2021.
-
Abstract
- High-pressure polymorphs can be obtained and stabilized at ambient pressure by utilizing dopants with more voluminous molecules, inducing internal strain in the structures. This effect has been confirmed for doped resorcinol and imidazole derivatives by nucleating and stabilizing their high-pressure phases under ambient conditions. The dopant molecular volume and concentration, as well as the bulk modulus of the polymorph in the binary system, are related to the stability region in the single-component phase diagram. High-pressure isothermal and isochoric recrystallizations yielded pure single crystals of resorcinol ε above 0.20 GPa and a new polymorph ζ above 0.70 GPa. These recrystallizations of pure resorcinol revealed within 1 GPa of the p–T phase diagram the boundaries and the stability regions of four resorcinol polymorphs α, β, ε, and ζ, contrary to the compression experiments on ambient-pressure polymorphs α and β, when the high-pressure phases were hidden behind the wide hysteresis extending to nearly 5 GPa. The hysteresis, originating from the H-bonding networks, hinders the formation of polymorphs ε and ζ when polymorphs α and β are compressed without melting or dissolving the crystals. Polymorph ζ is the only known resorcinol structure built of hydrogen-bonded layers.
- Subjects :
- Bulk modulus
Materials science
Dopant
Isochoric process
Resorcinol
Article
Isothermal process
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Crystallography
General Energy
chemistry
Binary system
Physical and Theoretical Chemistry
Phase diagram
Ambient pressure
Subjects
Details
- ISSN :
- 19327455 and 19327447
- Volume :
- 125
- Database :
- OpenAIRE
- Journal :
- The Journal of Physical Chemistry C
- Accession number :
- edsair.doi.dedup.....f84f6b9534db897e3775a81f13d34647
- Full Text :
- https://doi.org/10.1021/acs.jpcc.1c07297