Back to Search Start Over

Synthesis and fluorescence sensing of energetic materials using benzenesulfonic acid-doped polyaniline

Authors :
Veerabhadragouda B. Patil
Shruthy D. Pattathil
Ramón Martínez-Máñez
Satish A. Ture
Channabasaveshwar V. Yelamaggad
Venkataraman Abbaraju
Source :
Journal of Materials Science: Materials in Electronics. 33:8551-8565
Publication Year :
2021
Publisher :
Springer Science and Business Media LLC, 2021.

Abstract

[EN] The Fluorescence sensing technique for trace detection of High Energy Materials (HEMs) has gained more attention in recent times. In the present paper, the interaction between the fluorophore and HEMs is studied using spectroscopic and electrochemical techniques. The fluorophore polyaniline (PANI) was functionalised by doping it with benzenesulfonic acid (BSA) to increase the processability, and mobility of ¿-electrons along with decreased ¿-stacking. It is observed that upon doping the solubility of BSA-PANI is increased, facilitating a higher quenching by commercial explosives, i.e., RDX, CL-20, CL-20:RDX cocrystal. The interaction studies undertaken though fluorescence quenching, FTIR and Resonance Raman studies shows that the benzenoid unit, polaron and bipolaron nitrogen in BSA-PANI interact with nitro groups of HEMs and form a charge-transfer complex between HEMs and BSA-PANI undergoing predominantly a PET mechanism. LOD value is found to be least for Cocrystal (1.876¿×¿10¿5 M) when compared to other HEMs 3.191¿×¿10¿5 M (CL-20), 5.904¿×¿10¿5 M (RDX), 3.734¿×¿10¿5 M (PETN) indicating that cocrystal can be detected in trace level. The collaborative study between cyclic voltammetry and the observed results of fluorescence quenching, revealed that the emeraldine salt form of (BSA-PANI) is sensitive to HEMs.<br />The authors acknowledge and thank Prof. G. U. Kulkarni, the former Director of Centre for Nano and Soft Matter (CeNS) for providing the facility to work in the centre. The authors, S A Ture and V B Patil, expresses their thanks to M/s Premier Explosive Limited for their Financial support (H/A: 4254), the corresponding author expresses his thanks to UGC, New Delhi for the BSR faculty fellowship [F.4-5(11)/2019(BSR)]. We also thank the Spanish Government [RTI2018-100910-B-C41 (MCUI/AEI/FEDER, UE)] and Generalitat Valenciana (PROMETEO2018/024) for their support.

Details

ISSN :
1573482X and 09574522
Volume :
33
Database :
OpenAIRE
Journal :
Journal of Materials Science: Materials in Electronics
Accession number :
edsair.doi.dedup.....f833b7a7148fe285a14b11bb2292db0b
Full Text :
https://doi.org/10.1007/s10854-021-06537-7