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Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device

Authors :
Yazan Barazi
Nicolas Rouger
Jean-Marc Blaquiere
Frédéric Richardeau
Convertisseurs Statiques (LAPLACE-CS)
LAboratoire PLasma et Conversion d'Energie (LAPLACE)
Université Toulouse III - Paul Sabatier (UT3)
Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP)
Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3)
Université Fédérale Toulouse Midi-Pyrénées
Richardeau, Frédéric
Centre National de la Recherche Scientifique (CNRS)
Institut National Polytechnique (Toulouse) (Toulouse INP)
Source :
Microelectronics Reliability, Microelectronics Reliability, Elsevier, 2021, pp.114246. ⟨10.1016/j.microrel.2021.114246⟩, 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
Publication Year :
2021
Publisher :
HAL CCSD, 2021.

Abstract

International audience; This paper focuses on the extensive robustness validation of a gate charge detection method designed for SiC MOSFETs under short-circuit operation, and, in terms of failure-modes. The benefits of having a fast (submicrosecond-150ns) detection method is illustrated by a 1D thermo-metallurgical simulation. This method is integrated owing to an optimized SMD/PCB technology (Surface-Mount Device/ Printed Circuit Board).

Details

Language :
English
ISSN :
00262714
Database :
OpenAIRE
Journal :
Microelectronics Reliability, Microelectronics Reliability, Elsevier, 2021, pp.114246. ⟨10.1016/j.microrel.2021.114246⟩, 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
Accession number :
edsair.doi.dedup.....f6dd28a8f85e4e675bcd3d0e864045b3
Full Text :
https://doi.org/10.1016/j.microrel.2021.114246⟩