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Two-dimensional simulations of multi-hollow VHF SiH4/H2 plasma
- Source :
- AIP Advances, Vol 8, Iss 2, Pp 025316-025316-10 (2018)
- Publication Year :
- 2018
- Publisher :
- AIP Publishing LLC, 2018.
-
Abstract
- A triode multi-hollow VHF SiH4/H2 plasma (60 MHz) was examined at a pressure of 20 Pa by two-dimensional simulations using the fluid model. In this study, we considered the effect of the rate constant of reaction, SiH3 + SiH3→SiH2 + SiH4, on the plasma characteristics. A typical VHF plasma of a high-electron density with a low-electron temperature was obtained between two discharge electrodes. Spatial profiles of SiH3+, SiH2+, SiH3- and SiH3 densities were similar to that of the electron density while the electron temperature had a maximum value near the two discharge electrodes. It was found that the SiH3 radical density did not decrease rapidly near the substrate and the electron temperature was lower than 1 eV, suggesting that the triode multi-hollow plasma source can provide high quality amorphous silicon with a high deposition rate.
- Subjects :
- 010302 applied physics
Amorphous silicon
Electron density
Materials science
Hydrogen
General Physics and Astronomy
chemistry.chemical_element
02 engineering and technology
Substrate (electronics)
Plasma
021001 nanoscience & nanotechnology
01 natural sciences
Molecular physics
lcsh:QC1-999
law.invention
chemistry.chemical_compound
Reaction rate constant
chemistry
Triode
law
0103 physical sciences
Electron temperature
0210 nano-technology
lcsh:Physics
Subjects
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 8
- Issue :
- 2
- Database :
- OpenAIRE
- Journal :
- AIP Advances
- Accession number :
- edsair.doi.dedup.....f64458c6e50839c960d39c4ffc0d9b4f