Low-temperature LPE growth and characterization of InGaAsN thick layers

This work demonstrates the possibility for low-temperature Liquid-Phase Epitaxy (LPE) growth of lattice matched to GaAs substrate dilute nitride InGaAsN layers with good crystalline quality and high Hall electron mobility. X-ray microanalysis and X-ray diffraction methods have been used to determine the composition and crystalline quality of the grown InGaAsN layers. Surface roughness is examined by atomic force microscopy. N-related local vibration modes are observed by Raman scattering. The Hall electron mobility and free carrier concentration have been measured in the temperature range 80-300K by conventional Van der Pauw method.