Cite
Investigation of electron trapping behavior in n-channel organic thin-film transistors with ultrathin polymer passivation on SiO2 gate insulator
MLA
Kei Noda, et al. “Investigation of Electron Trapping Behavior in N-Channel Organic Thin-Film Transistors with Ultrathin Polymer Passivation on SiO2 Gate Insulator.” Synthetic Metals, vol. 160, July 2010, pp. 1574–78. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....f3e1f01ee535eb554f903f93bc98b1fd&authtype=sso&custid=ns315887.
APA
Kei Noda, Kazumi Matsushige, Shinji Tanida, & Hiroshi Kawabata. (2010). Investigation of electron trapping behavior in n-channel organic thin-film transistors with ultrathin polymer passivation on SiO2 gate insulator. Synthetic Metals, 160, 1574–1578.
Chicago
Kei Noda, Kazumi Matsushige, Shinji Tanida, and Hiroshi Kawabata. 2010. “Investigation of Electron Trapping Behavior in N-Channel Organic Thin-Film Transistors with Ultrathin Polymer Passivation on SiO2 Gate Insulator.” Synthetic Metals 160 (July): 1574–78. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....f3e1f01ee535eb554f903f93bc98b1fd&authtype=sso&custid=ns315887.