Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism

International audience; Using the Vapor-Liquid-Solid mechanism in Ge-Si melts we have grown 3C-SiC layers on top of -oriented, Si face, 6H-SiC substrates. The surface morphology was free of spiral growth but highly step bunched. The 3C-SiC polytype was identified by micro-Raman spectroscopy and confirmed by low temperature photoluminescence. Electron backscattering diffraction mapping showed that the upper side of the layers is single-domain, i.e. that the 3C-SiC material displays only one in-plane orientation. Cross-sectional and plane-view TEM investigations allowed detection of double positioning boundaries but only confined at the substrate/epilayer interface. The main additional defects found were stacking faults (SF) with a density of similar to 4.10(3) cm(-1). Forming at the interface, they propagate through the epitaxial layer.