Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure

Authors :: Hyoung-Do Kim
Muhammad Naqi
Seong Cheol Jang
Ji-Min Park
Yun Chang Park
Kyung Park
Ho-Hyun Nahm
Sunkook Kim
Hyun-Suk Kim
Source :: ACS Applied Materials & Interfaces. 14:13490-13498
Publication Year :: 2022
Publisher :: American Chemical Society (ACS), 2022.
Abstract: Zinc oxynitride (ZnON) has the potential to overcome the performance and stability limitations of current amorphous oxide semiconductors because ZnON-based thin-film transistors (TFTs) have a high field-effect mobility of 50 cm

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