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Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope
- Source :
- Nature Communications. 5
- Publication Year :
- 2014
- Publisher :
- Springer Science and Business Media LLC, 2014.
-
Abstract
- In devices like the single-electron transistor the detailed transport properties of a nanostructure can be measured by tuning its energy levels with a gate voltage. The scanning tunnelling microscope in contrast usually lacks such a gate electrode. Here we demonstrate tuning of the levels of a donor in a scanning tunnelling microscope without a third electrode. The potential and the position of the tip are used to locally control band bending. Conductance maps in this parameter space reveal Coulomb diamonds known from three-terminal data from single-electron transistors and provide information on charging transitions, binding energies and vibrational excitations. The analogy to single-electron transistor data suggests a new way of extracting these key quantities without making any assumptions about the unknown shape of the scanning tunnelling microscope tip.
- Subjects :
- Multidisciplinary
Materials science
Microscope
business.industry
Binding energy
General Physics and Astronomy
chemistry.chemical_element
Nanotechnology
General Chemistry
Zinc
Electron transport chain
General Biochemistry, Genetics and Molecular Biology
law.invention
Condensed Matter::Materials Science
Band bending
chemistry
law
Electrode
Microscopy
Optoelectronics
business
Quantum tunnelling
Subjects
Details
- ISSN :
- 20411723
- Volume :
- 5
- Database :
- OpenAIRE
- Journal :
- Nature Communications
- Accession number :
- edsair.doi.dedup.....f2809f7fb0e02e86d72964a97a48f82c
- Full Text :
- https://doi.org/10.1038/ncomms3992