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Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope

Authors :
Richard Berndt
Alexander Weismann
Hao Zheng
Source :
Nature Communications. 5
Publication Year :
2014
Publisher :
Springer Science and Business Media LLC, 2014.

Abstract

In devices like the single-electron transistor the detailed transport properties of a nanostructure can be measured by tuning its energy levels with a gate voltage. The scanning tunnelling microscope in contrast usually lacks such a gate electrode. Here we demonstrate tuning of the levels of a donor in a scanning tunnelling microscope without a third electrode. The potential and the position of the tip are used to locally control band bending. Conductance maps in this parameter space reveal Coulomb diamonds known from three-terminal data from single-electron transistors and provide information on charging transitions, binding energies and vibrational excitations. The analogy to single-electron transistor data suggests a new way of extracting these key quantities without making any assumptions about the unknown shape of the scanning tunnelling microscope tip.

Details

ISSN :
20411723
Volume :
5
Database :
OpenAIRE
Journal :
Nature Communications
Accession number :
edsair.doi.dedup.....f2809f7fb0e02e86d72964a97a48f82c
Full Text :
https://doi.org/10.1038/ncomms3992