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Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates

Authors :
M. F. Chisholm
Martin Schmidbauer
Jordi Ibáñez
Mohamed Henini
Sergio I. Molina
David L. Sales
Jan Misiewicz
Lyudmila Turyanska
M. Shafi
Sergei V. Novikov
Publication Year :
2007
Publisher :
American Institute of Physics (AIP), 2007.

Abstract

We report the growth by molecular beam epitaxy of Ga Bix As1-x epilayers on (311) B GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron microscopy, and Z -contrast imaging to characterize the structural properties of the as-grown material. We find that the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the (311) B epilayers than in (001) epilayers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy. © 2007 American Institute of Physics.

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....f1b44ff0253b9b6871a9851983c2285f