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Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates
- Publication Year :
- 2007
- Publisher :
- American Institute of Physics (AIP), 2007.
-
Abstract
- We report the growth by molecular beam epitaxy of Ga Bix As1-x epilayers on (311) B GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron microscopy, and Z -contrast imaging to characterize the structural properties of the as-grown material. We find that the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the (311) B epilayers than in (001) epilayers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy. © 2007 American Institute of Physics.
- Subjects :
- Diffraction
Materials science
Physics and Astronomy (miscellaneous)
F300 Physics
business.industry
Band gap
Alloy
Crystal growth
engineering.material
Gallium arsenide
Crystallography
chemistry.chemical_compound
chemistry
Transmission electron microscopy
X-ray crystallography
engineering
Optoelectronics
business
Molecular beam epitaxy
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....f1b44ff0253b9b6871a9851983c2285f