Back to Search
Start Over
A ferroelectric semiconductor field-effect transistor
- Source :
- Nature Electronics. 2:580-586
- Publication Year :
- 2019
- Publisher :
- Springer Science and Business Media LLC, 2019.
-
Abstract
- Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide ({\alpha}-In2Se3), is used as the channel material in the device. {\alpha}-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 {\mu}A {\mu}m-1, and a low supply voltage.<br />Comment: 44 pages, 16 figures
- Subjects :
- Materials science
Passivation
Gate dielectric
FOS: Physical sciences
chemistry.chemical_element
Applied Physics (physics.app-ph)
law.invention
Atomic layer deposition
law
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Electrical and Electronic Engineering
Instrumentation
Condensed Matter - Materials Science
Condensed Matter - Mesoscale and Nanoscale Physics
business.industry
Transistor
Materials Science (cond-mat.mtrl-sci)
Physics - Applied Physics
Ferroelectricity
Electronic, Optical and Magnetic Materials
Semiconductor
chemistry
Optoelectronics
Field-effect transistor
business
Indium
Subjects
Details
- ISSN :
- 25201131
- Volume :
- 2
- Database :
- OpenAIRE
- Journal :
- Nature Electronics
- Accession number :
- edsair.doi.dedup.....eff5fe337389a355854df50d9bf0cb6f