Cite
Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene
MLA
Adalberto Fazzio, et al. Disorder Effects of Vacancies on the Electronic Transport Properties of Realistic Topological Insulators Nanoribbons: The Case of Bismuthene. Oct. 2020. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....ef92e7f4e05b4af4f386958b52a73eae&authtype=sso&custid=ns315887.
APA
Adalberto Fazzio, Marcio Costa, Caio H. Lewenkopf, Gabriel R. Schleder, Armando Pezo, & Bruno Focassio. (2020). Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene.
Chicago
Adalberto Fazzio, Marcio Costa, Caio H. Lewenkopf, Gabriel R. Schleder, Armando Pezo, and Bruno Focassio. 2020. “Disorder Effects of Vacancies on the Electronic Transport Properties of Realistic Topological Insulators Nanoribbons: The Case of Bismuthene,” October. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....ef92e7f4e05b4af4f386958b52a73eae&authtype=sso&custid=ns315887.