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Origin of the defects observed after laser annealing of implanted silicon
- Source :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 1981, 39, pp.159
- Publication Year :
- 1981
- Publisher :
- AIP Publishing, 1981.
-
Abstract
- Deep‐level transient spectroscopy experiments, performed on 31P+‐implanted and laser‐annealed silicon, have shown that the defect concentration is considerably reduced when a conventional thermal annealing is performed before the laser treatment. A model is presented which explains the origin of the defects.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Silicon
Annealing (metallurgy)
business.industry
Laser treatment
Analytical chemistry
chemistry.chemical_element
Crystallographic defect
Laser annealing
Ion implantation
chemistry
Optoelectronics
business
Spectroscopy
Transient spectroscopy
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 39
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....ee90d0ddc4d75b5587e67d49a5a4276d
- Full Text :
- https://doi.org/10.1063/1.92646