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Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator

Authors :
Mario J. Paniccia
Maodong Gao
John E. Bowers
Avi Feshali
Heming Wang
Qi-Fan Yang
Boqiang Shen
Kerry J. Vahala
Lue Wu
Mark A. Leal
Lin Chang
Warren Jin
Publication Year :
2021
Publisher :
Optical Society of America, 2021.

Abstract

A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundry- fabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz2 Hz-1 and yielding instantaneous linewidth of 1.2 Hz.

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....ee7c3ff2b61b55ad487d0c8dcd853d38