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On-state breakdown in power HEMTs: measurements and modeling

Authors :
G. Duh
P.C. Chao
M.H. Somerville
J.A. del Alamo
R. R. Blanchard
Source :
IEEE Transactions on Electron Devices. 46:1087-1093
Publication Year :
1999
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 1999.

Abstract

We have carried out a systematic study of on-state breakdown in a sample set of InAlAs/InGaAs HEMT's using a new gate current extraction technique in conjunction with sidegate and temperature-dependent measurements. We find that as the device is turned on, the breakdown voltage limiting mechanism changes from a TFE-dominated process to a multiplication-dominated process. This physical understanding allows the creation of a phenomenological physical model for breakdown which agrees well with all our experimental results, and explains the relationship between BV/sub on/ and the sheet carrier concentration. Our results suggest that depending on device design, either on-state or off-state breakdown can limit maximum power.

Details

ISSN :
00189383
Volume :
46
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi.dedup.....ed507fa04102256086fdf14bbeed6051
Full Text :
https://doi.org/10.1109/16.766868