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On-state breakdown in power HEMTs: measurements and modeling
- Source :
- IEEE Transactions on Electron Devices. 46:1087-1093
- Publication Year :
- 1999
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1999.
-
Abstract
- We have carried out a systematic study of on-state breakdown in a sample set of InAlAs/InGaAs HEMT's using a new gate current extraction technique in conjunction with sidegate and temperature-dependent measurements. We find that as the device is turned on, the breakdown voltage limiting mechanism changes from a TFE-dominated process to a multiplication-dominated process. This physical understanding allows the creation of a phenomenological physical model for breakdown which agrees well with all our experimental results, and explains the relationship between BV/sub on/ and the sheet carrier concentration. Our results suggest that depending on device design, either on-state or off-state breakdown can limit maximum power.
- Subjects :
- Materials science
Maximum power principle
business.industry
Thermionic emission
High-electron-mobility transistor
Electronic, Optical and Magnetic Materials
Gallium arsenide
Power (physics)
chemistry.chemical_compound
Field electron emission
chemistry
Limit (music)
Optoelectronics
Breakdown voltage
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 00189383
- Volume :
- 46
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi.dedup.....ed507fa04102256086fdf14bbeed6051
- Full Text :
- https://doi.org/10.1109/16.766868