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Partial Discharge Measurements on Dibenzyltoluene for High Temperature Encapsulant Application up to 350°C

Authors :
Joko Muslim
Ngapuli I. Sinisuka
Rachelle Hanna
Olivier Lesaint
Laboratoire de Génie Electrique de Grenoble (G2ELab)
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Université de Bandung
Garcia, Sylvie
Source :
20th. Int. Conf. on Diel. Liq. (ICDL), 20th. Int. Conf. on Diel. Liq. (ICDL), Jun 2019, Rome, Italy, HAL
Publication Year :
2019
Publisher :
IEEE, 2019.

Abstract

Partial discharges characterization on ceramic substrates and dielectric liquids under high temperature up to $350^{\circ}\mathrm{C}$ is investigated. Aluminum nitride (AlN) and alumina (Al 2 O 3 substrates, and a high temperature non-polar dibenzyltoluene (DBT) liquid are used. Several complementary measurements are also done in a synthetic ester liquid. PD measurements on AlN substrates embedded in DBT show a good behavior up to $300^{\circ}\mathrm{C}$, and up to $350^{\circ}\mathrm{C}$ with Alumina. This shows that high temperature insulating liquid may constitute a good alternative to silicone gels for the encapsulation of power electronics circuits at high temperature and high voltage. The comparison between PD characteristics in the liquid alone and with substrates show that PDs mostly occur within the ceramic material at temperatures up to $300^{\circ}\mathrm{C}$.

Details

Database :
OpenAIRE
Journal :
2019 IEEE 20th International Conference on Dielectric Liquids (ICDL)
Accession number :
edsair.doi.dedup.....ec51f72a3b61a0807257d917fe1ee63e
Full Text :
https://doi.org/10.1109/icdl.2019.8796694