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Strong influence of Ga/N flux ratio on Mn incorporation into Ga1−xMnxN epilayers grown by plasma-assisted molecular beam epitaxy

Authors :
Joel Cibert
S. Marcet
R. Giraud
Edith Bellet-Amalric
H. Mariette
Shinji Kuroda
Nanophysique et Semiconducteurs (NPSC)
PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS)
Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)
Direction de Recherche Fondamentale (CEA) (DRF (CEA))
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA))
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Source :
Applied Physics Letters, Applied Physics Letters, 2003, 83 (22), pp.4580-4582. ⟨10.1063/1.1629791⟩
Publication Year :
2003
Publisher :
AIP Publishing, 2003.

Abstract

We report the growth of Mn-doped wurtzite GaN epilayers by nitrogen plasma-assisted molecular beam epitaxy, with a systematic attention to the dependence on the growth conditions. The addition of Mn modifies the growth diagram related to the Ga/N flux ratio. In particular, the stable Ga-bilayer coverage on the growth surface for the Ga-rich condition is destabilized in the presence of Mn. Mn incorporation in the epilayers is found to strongly depend on the Ga/N flux ratio: it varies by two orders of magnitude between the Ga-rich and the N-rich growth conditions. X-ray diffraction measurements on epilayers grown in the stoichiometric condition reveal a clear contrast between the precipitation of perovskite GaMn3N clusters at Mn compositions higher than 1.7%, and the single phase of wurtzite Ga1−xMnxN at lower Mn compositions.

Details

ISSN :
10773118 and 00036951
Volume :
83
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi.dedup.....ec4439bd67121dc9ce5c6d66c2bd1203
Full Text :
https://doi.org/10.1063/1.1629791