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Strong influence of Ga/N flux ratio on Mn incorporation into Ga1−xMnxN epilayers grown by plasma-assisted molecular beam epitaxy
- Source :
- Applied Physics Letters, Applied Physics Letters, 2003, 83 (22), pp.4580-4582. ⟨10.1063/1.1629791⟩
- Publication Year :
- 2003
- Publisher :
- AIP Publishing, 2003.
-
Abstract
- We report the growth of Mn-doped wurtzite GaN epilayers by nitrogen plasma-assisted molecular beam epitaxy, with a systematic attention to the dependence on the growth conditions. The addition of Mn modifies the growth diagram related to the Ga/N flux ratio. In particular, the stable Ga-bilayer coverage on the growth surface for the Ga-rich condition is destabilized in the presence of Mn. Mn incorporation in the epilayers is found to strongly depend on the Ga/N flux ratio: it varies by two orders of magnitude between the Ga-rich and the N-rich growth conditions. X-ray diffraction measurements on epilayers grown in the stoichiometric condition reveal a clear contrast between the precipitation of perovskite GaMn3N clusters at Mn compositions higher than 1.7%, and the single phase of wurtzite Ga1−xMnxN at lower Mn compositions.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 83
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....ec4439bd67121dc9ce5c6d66c2bd1203
- Full Text :
- https://doi.org/10.1063/1.1629791