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Surface reflectance anisotropy of indium-terminated GaAs(100) surfaces
- Source :
- Surface Science. :404-408
- Publication Year :
- 1997
- Publisher :
- Elsevier BV, 1997.
-
Abstract
- The growth of thin indium-layers on the GaAs(100) As-rich (2 × 4) c (2 × 8) surface has been investigated by reflectance anisotropy spectroscopy (RAS), LEED and AES. Clean surfaces of the (2 × 4) c (2 × 8) reconstruction were prepared in UHV by thermal desorption of a protective arsenic layer deposited on homoepitaxially grown MBE layers. Room temperature deposition of indium on the (2 × 4) c (2 × 8) surface and subsequent annealing at 450°C leads to a 90° rotation of symmetry in the LEED pattern at a threshold coverage of 0.5 monolayers, i.e. a change from the (2 × 4) c (2 × 8) to the (4 × 2) c (8 × 2) reconstruction. The RAS spectra show the evolution of a distinct negative feature at 1.8 eV, that shifts to 2.1 eV after annealing, corresponding to optical transitions attributed to In-dimers orientated along the [011]-direction. AES analysis shows a change in growth mode beyond 0.5 ML indicating saturation of all available adsorption sites at this coverage and RAS spectra show a contribution from additional disordered In. The AES spectra display no evidence of a surface exchange reaction between gallium and arsenic atoms, thus indicating a surface termination by In-dimers adsorbed on a layer of As.
- Subjects :
- Annealing (metallurgy)
Analytical chemistry
Thermal desorption
chemistry.chemical_element
Surfaces and Interfaces
Condensed Matter Physics
Indium
Settore FIS/03 - Fisica della Materia
Surfaces, Coatings and Films
Gallium arsenide
Reflection spectroscopy
chemistry.chemical_compound
chemistry
Monolayer
Materials Chemistry
Gallium
Spectroscopy
Surface states
Subjects
Details
- ISSN :
- 00396028
- Database :
- OpenAIRE
- Journal :
- Surface Science
- Accession number :
- edsair.doi.dedup.....eaa312a941da3587cb4a166afa75af6b