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Nanometer size field effect transistors for terahertz detectors
- Source :
- Nanotechnology, Nanotechnology, Institute of Physics, 2013, 24 (21), pp.214002. ⟨10.1088/0957-4484/24/21/214002⟩, Nanotechnology (Bristol. Print) 24 (2013). doi:10.1088/0957-4484/24/21/214002, info:cnr-pdr/source/autori:Knap W. [ 1,2,3 ] ; Rumyantsev S. [ 1,2,4 ] ; Vitiello M. S. [ 5,6 ] ; Coquillat D. [ 1,2 ] ; Blin S. [ 7,2 ] ; Dyakonova N. [ 1,2 ] ; Shur M. [ 4 ] ; Teppe F. [ 1,2 ] ; Tredicucci A. [ 5,6 ] ; Nagatsuma T. [ 8 ]/titolo:Nanometer size field effect transistors for terahertz detectors/doi:10.1088%2F0957-4484%2F24%2F21%2F214002/rivista:Nanotechnology (Bristol. Print)/anno:2013/pagina_da:/pagina_a:/intervallo_pagine:/volume:24
- Publication Year :
- 2013
- Publisher :
- HAL CCSD, 2013.
-
Abstract
- Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation.
- Subjects :
- Materials science
Transistors, Electronic
Terahertz radiation
Transducers
Phase (waves)
Bioengineering
02 engineering and technology
Hardware_PERFORMANCEANDRELIABILITY
01 natural sciences
Terahertz Imaging
0103 physical sciences
Broadband
Hardware_INTEGRATEDCIRCUITS
Nanotechnology
General Materials Science
Electrical and Electronic Engineering
Radiometry
Terahertz Spectroscopy
010302 applied physics
business.industry
Mechanical Engineering
Nanometer size
Equipment Design
General Chemistry
021001 nanoscience & nanotechnology
Terahertz metamaterials
[PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]
Semiconductors
Mechanics of Materials
Terahertz detector
Optoelectronics
Nanometre
Field-effect transistor
0210 nano-technology
business
Hardware_LOGICDESIGN
Subjects
Details
- Language :
- English
- ISSN :
- 09574484 and 13616528
- Database :
- OpenAIRE
- Journal :
- Nanotechnology, Nanotechnology, Institute of Physics, 2013, 24 (21), pp.214002. ⟨10.1088/0957-4484/24/21/214002⟩, Nanotechnology (Bristol. Print) 24 (2013). doi:10.1088/0957-4484/24/21/214002, info:cnr-pdr/source/autori:Knap W. [ 1,2,3 ] ; Rumyantsev S. [ 1,2,4 ] ; Vitiello M. S. [ 5,6 ] ; Coquillat D. [ 1,2 ] ; Blin S. [ 7,2 ] ; Dyakonova N. [ 1,2 ] ; Shur M. [ 4 ] ; Teppe F. [ 1,2 ] ; Tredicucci A. [ 5,6 ] ; Nagatsuma T. [ 8 ]/titolo:Nanometer size field effect transistors for terahertz detectors/doi:10.1088%2F0957-4484%2F24%2F21%2F214002/rivista:Nanotechnology (Bristol. Print)/anno:2013/pagina_da:/pagina_a:/intervallo_pagine:/volume:24
- Accession number :
- edsair.doi.dedup.....e8575e17ce04d55f48b6f45445f8bf05
- Full Text :
- https://doi.org/10.1088/0957-4484/24/21/214002⟩