Low energy electron beam induced vacancy activation in GaN

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy(MOVPE) is presented. The GaN samples are irradiated with a 5–20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiatedGaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive VGa-H n complexes that can be activated by H removal during low energy electron irradiation.