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Diffusion-Driven Charge Transport in Light Emitting Devices
- Source :
- Materials, Materials, Vol 10, Iss 12, p 1421 (2017)
- Publication Year :
- 2017
-
Abstract
- Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses which arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics.
- Subjects :
- Materials science
diffusion injection
Gallium nitride
02 engineering and technology
Review
01 natural sciences
lcsh:Technology
7. Clean energy
law.invention
chemistry.chemical_compound
law
0103 physical sciences
Microelectronics
General Materials Science
Power semiconductor device
light-emitting diodes (LEDs)
lcsh:Microscopy
lateral epitaxial overgrowth
lcsh:QC120-168.85
Diode
010302 applied physics
lcsh:QH201-278.5
nanotechnology
lcsh:T
business.industry
Heterojunction
021001 nanoscience & nanotechnology
Semiconductor
chemistry
lcsh:TA1-2040
selective-area growth (SAG)
Optoelectronics
lcsh:Descriptive and experimental mechanics
Charge carrier
lcsh:Electrical engineering. Electronics. Nuclear engineering
0210 nano-technology
lcsh:Engineering (General). Civil engineering (General)
business
lcsh:TK1-9971
Light-emitting diode
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Materials, Materials, Vol 10, Iss 12, p 1421 (2017)
- Accession number :
- edsair.doi.dedup.....e6d4da2c80d0ad47c162b5d8e5142190