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Estimation of the Crystallinity of P-type Hydrogenated Nanocrystalline Cubic Silicon Carbide by Conductive Atomic Force Microscopy

Authors :
Makoto Konagai
Daisuke Hamashita
Yasuyoshi Kurokawa
Source :
MRS Proceedings. 1426:347-352
Publication Year :
2012
Publisher :
Springer Science and Business Media LLC, 2012.

Abstract

P-type hydrogenated nanocrystalline cubic silicon carbide is a promising material for the emitter of n-type crystalline silicon heterojunction solar cell due to its lower light absorption and wider bandgap of 2.2 eV. The electrical properties of hydrogenated nanocrystalline cubic silicon carbide can be influenced by its crystallinity. In this study, we propose the use of conductive atomic force microscopy (Conductive-AFM) to evaluate the crystalline volume fraction (fc) of p-nc-3C-SiC:H thin films (20∼30 nm) as a new method instead of Raman scattering spectroscopy, X-ray diffraction, and spectroscopic ellipsometry.

Details

ISSN :
19464274 and 02729172
Volume :
1426
Database :
OpenAIRE
Journal :
MRS Proceedings
Accession number :
edsair.doi.dedup.....e6a31a241d62e110d97432c8f6119bf5
Full Text :
https://doi.org/10.1557/opl.2012.837