Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs

MLA

Francois Andrieu, et al. Front-Back Gate Coupling Effect on 1/f Noise in Ultra-Thin Si Film FDSOI MOSFETs. Sept. 2012. EBSCOhost, https://doi.org/10.1109/ISCDG.2012.6360011⟩.

APA

Francois Andrieu, Gerard Ghibaudo, Nicolas Planes, Olivier Faynot, Christoforos G. Theodorou, J. Jomaah, Charalabos A. Dimitriadis, Sebastien Haendler, E. G. Ioannidis, Franck Arnaud, & Thierry Poiroux. (2012). Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs. https://doi.org/10.1109/ISCDG.2012.6360011⟩

Chicago

Francois Andrieu, Gerard Ghibaudo, Nicolas Planes, Olivier Faynot, Christoforos G. Theodorou, J. Jomaah, Charalabos A. Dimitriadis, et al. 2012. “Front-Back Gate Coupling Effect on 1/f Noise in Ultra-Thin Si Film FDSOI MOSFETs,” September. doi:10.1109/ISCDG.2012.6360011⟩.