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AlGaN/GaN pressure sensor with a Wheatstone bridge structure
- Source :
- AIP Advances, Vol 8, Iss 8, Pp 085202-085202-6 (2018)
- Publication Year :
- 2018
- Publisher :
- AIP Publishing LLC, 2018.
-
Abstract
- In this work, a Wheatstone bridge-type pressure sensor based on AlGaN/GaN heterostructure was fabricated for the first time. The pressure sensor consisted of four gateless high electron mobility transistors (HEMTs) on a 585 μm depth circular membrane, in which 15-μm-thick silicon substrate was left. Direct voltage readout was realized in the AlGaN/GaN pressure sensor, which exhibited a non-linearity of 0.6% with a sensitivity of 1.25 μV/kPa/V over a wide pressure range from 0.1 MPa to 5 MPa. Because of the in-plane isotropic properties, the working mechanism in the AlGaN/GaN pressure sensor is found to be quite different from the silicon-based sensor. Although the resistances of the four gateless HEMTs all increased with enlarging pressure, the changes of neighboring resistors varied with alignments under the piezoelectric effects. Finally, voltage linear readout was realized by the differential operation of Wheatstone bridge circuit.
- Subjects :
- 010302 applied physics
Materials science
Wheatstone bridge
Silicon
business.industry
Transistor
Wide-bandgap semiconductor
General Physics and Astronomy
chemistry.chemical_element
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
01 natural sciences
Pressure sensor
lcsh:QC1-999
law.invention
chemistry
law
0103 physical sciences
Optoelectronics
Resistor
0210 nano-technology
business
lcsh:Physics
Voltage
Subjects
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 8
- Issue :
- 8
- Database :
- OpenAIRE
- Journal :
- AIP Advances
- Accession number :
- edsair.doi.dedup.....e4880956c9477fdb316420b2b35c27ca