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Spectroscopic study of SiC-like structures formed on polycrystalline silicon sheets during growth
- Publication Year :
- 1994
-
Abstract
- Edge-defined film-fed grown polycrystalline silicon sheets, grown with one face exposed to oxidizing CO gas added to the inert Ar atmosphere, were studied. Interaction of CO with molten silicon surface during growth produced SiC-like structures in a thin layer on the surface exposed to CO. Infrared spectroscopy results suggest that this layer is constituted of good quality SiC ; however, Raman and x-ray photoelectron spectroscopy showed that it consists of Si1− xCx in the form of small crystallites mixed with C- and O-rich silicon. Journal of Applied Physics is copyrighted by The American Institute of Physics.
- Subjects :
- SiC
Materials science
Silicon
Analytical chemistry
Nanocrystalline silicon
General Physics and Astronomy
Infrared spectroscopy
chemistry.chemical_element
silicon carbide films
crystallinity
x-ray photoelectron spectroscopy
Raman spectroscopy
engineering.material
symbols.namesake
Polycrystalline silicon
X-ray photoelectron spectroscopy
chemistry
polycrystalline silicon
infrared
symbols
engineering
Crystallite
Layer (electronics)
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....e483f7fdc8a0554ae46209e06158690c