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Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Authors :
Fenglin Wang
Wenzhong Bao
Chun Ning Lau
Hang Zhang
Elena Bekyarova
Jhao-Wun Huang
Robert C. Haddon
Zeng Zhao
Source :
Nano Letters. 11:4047-4051
Publication Year :
2011
Publisher :
American Chemical Society (ACS), 2011.

Abstract

Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that nonsuspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap ∼0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a semiconductor in which transport occurs via thermal activation over a transport gap ∼80 meV from 4 to 300 K. This noninvasive and scalable functionalization technique paves the way for CMOS-compatible band gap engineering of graphene electronic devices.

Details

ISSN :
15306992 and 15306984
Volume :
11
Database :
OpenAIRE
Journal :
Nano Letters
Accession number :
edsair.doi.dedup.....e3206083b0ed3dd03b216cfec8df1d41