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Equilibrium shape of Si
- Source :
- Physical review letters. 70(11)
- Publication Year :
- 1993
-
Abstract
- Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve γ(θ) for Si. γ(111) is the global minimum, with γ(100)≃1.1 γ(111) and all other cusps on the surface being relatively small. The experimental γ(θ) is compared with theoretical predictions and earlier experiments. Step energies obtained from dγ/dθ are ≃28±10 meV/atom on (100) and ≃140±20 meV/atom on (111); these values are compared with scanning tunneling microscopy experiments
- Subjects :
- Materials science
Silicon
Annealing (metallurgy)
business.industry
Semiconductor materials
General Physics and Astronomy
chemistry.chemical_element
Molecular physics
Surface energy
law.invention
Ion implantation
Optics
chemistry
law
Transmission electron microscopy
Scanning tunneling microscope
business
Helium
Subjects
Details
- ISSN :
- 10797114
- Volume :
- 70
- Issue :
- 11
- Database :
- OpenAIRE
- Journal :
- Physical review letters
- Accession number :
- edsair.doi.dedup.....e283d5d179126bcbd25196e1d1d39808