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Equilibrium shape of Si

Authors :
N. Moriya
Alice E. White
Leonard C. Feldman
D. J. Eaglesham
D. C. Jacobson
Source :
Physical review letters. 70(11)
Publication Year :
1993

Abstract

Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve γ(θ) for Si. γ(111) is the global minimum, with γ(100)≃1.1 γ(111) and all other cusps on the surface being relatively small. The experimental γ(θ) is compared with theoretical predictions and earlier experiments. Step energies obtained from dγ/dθ are ≃28±10 meV/atom on (100) and ≃140±20 meV/atom on (111); these values are compared with scanning tunneling microscopy experiments

Details

ISSN :
10797114
Volume :
70
Issue :
11
Database :
OpenAIRE
Journal :
Physical review letters
Accession number :
edsair.doi.dedup.....e283d5d179126bcbd25196e1d1d39808