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Resonant tunnelling via InAs self-organized quantum dot states
- Source :
- Scopus-Elsevier, Hong Kong University of Science and Technology
- Publication Year :
- 1998
- Publisher :
- Elsevier BV, 1998.
-
Abstract
- InAs quantum dots formed by submonolayer insertion of InAs into the GaAs quantum well of a GaAs/AlAs double barrier resonant tunnelling structure were studied. A series of sharp resonant tunnelling peaks in I–V characteristics of resonant tunnelling diodes with InAs insertions were observed. Temperature and magnetic field dependent I–V studies and theoretical modeling led us to conclude that these peaks are the result of resonant tunnelling through localized states associated with InAs quantum dots.
- Subjects :
- Condensed matter physics
Condensed Matter::Other
Binary compound
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Double barrier
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Magnetic field
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
Quantum dot
Tunnel diode
Electrical and Electronic Engineering
Quantum tunnelling
Quantum well
Diode
Subjects
Details
- ISSN :
- 01679317
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering
- Accession number :
- edsair.doi.dedup.....e143da7a69ccd92d7f31151f1d72a3df