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Electrode Dependence of Tunneling Electroresistance and Switching Stability in Organic Ferroelectric P(VDF-TrFE)-Based Tunnel Junctions
- Source :
- Majumdar, S, Chen, B, Qin, Q H, Majumdar, H S & van Dijken, S 2018, ' Electrode Dependence of Tunneling Electroresistance and Switching Stability in Organic Ferroelectric P(VDF-TrFE)-Based Tunnel Junctions ', Advanced Functional Materials, vol. 28, no. 15, 1703273 . https://doi.org/10.1002/adfm.201703273
- Publication Year :
- 2018
-
Abstract
- Ferroelectric tunnel junctions (FTJs) are promising candidates for nonvolatile memories and memristor-based computing circuits. Thus far, most research has focused on FTJs with a perovskite oxide ferroelectric tunnel barrier. As the need for high-temperature epitaxial film growth challenges the technological application of such inorganic junctions, more easily processable organic ferroelectrics can serve as alternative if large tunneling electroresistance (TER) and good switching durability would persist. This study reports on the performance of FTJs with a spin-coated ferroelectric P(VDF-TrFE) copolymer tunnel barrier. The use of three different bottom electrodes, indium tin oxide (ITO), La0.67Sr0.33MnO3, (LSMO), and Nb-doped SrTiO3 (STO) are compared and it is shown that the polarity and magnitude of the TER effect depend on their conductivity. The largest TER of up to 107% at room temperature is measured on FTJs with a semiconducting Nb-doped STO electrode. This large switching effect is attributed to the formation of an extra barrier over the space charge region in the substrate. The organic FTJs exhibit good resistance retention and switching endurance up to 380 K, which is just below the ferroelectric Curie temperature of the P(VDF-TrFE) barrier.
- Subjects :
- Materials science
Condensed matter physics
ta114
Molecular electronics
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Ferroelectricity
0104 chemical sciences
Electronic, Optical and Magnetic Materials
Biomaterials
Resistive switching
Electrode
Electrochemistry
Ferroelectric tunnel junctions
0210 nano-technology
ta216
Quantum tunnelling
Subjects
Details
- Language :
- English
- ISSN :
- 1616301X
- Volume :
- 28
- Issue :
- 15
- Database :
- OpenAIRE
- Journal :
- ADVANCED FUNCTIONAL MATERIALS
- Accession number :
- edsair.doi.dedup.....e06f5f97af7a877627632fbdc219bffe