Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors

MLA

Antônio Carlos Hernandes, et al. “Growth and Characterization of HgI2, PbI2 and PbI2:HgI2 Layered Semiconductors.” Materials Research, vol. 2, no. 2, Jan. 1999, pp. 75–79. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....dfdfe4cc5bc6e8362eb5d1c4e24263af&authtype=sso&custid=ns315887.

APA

Antônio Carlos Hernandes, Rodrigo Fernando Bianchi, M C C Custódio, Erika Regina Manoel, & Francisco Eduardo Gontijo Guimarães. (1999). Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors. Materials Research, 2(2), 75–79.

Chicago

Antônio Carlos Hernandes, Rodrigo Fernando Bianchi, M C C Custódio, Erika Regina Manoel, and Francisco Eduardo Gontijo Guimarães. 1999. “Growth and Characterization of HgI2, PbI2 and PbI2:HgI2 Layered Semiconductors.” Materials Research 2 (2): 75–79. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....dfdfe4cc5bc6e8362eb5d1c4e24263af&authtype=sso&custid=ns315887.