Back to Search
Start Over
Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots
- Source :
- Nanotechnology, Nanotechnology, 2008, 19 (28), pp.285715. ⟨10.1088/0957-4484/19/28/285715⟩, Nanotechnology, Institute of Physics, 2008, 19 (28), pp.285715. ⟨10.1088/0957-4484/19/28/285715⟩
- Publication Year :
- 2008
- Publisher :
- IOP Publishing, 2008.
-
Abstract
- In this work, low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) experiments have been carried out to investigate the optical and electronic properties of InAs/GaAs quantum dots (QDs) subjected to room-temperature proton implantation at various doses (5 × 10 10 –10 14 ions cm −2 ) and subsequent thermal annealing. The energy shift of the main QD emission band is found to increase with increasing implantation dose. Our measurements show clear evidence of an inhomogeneous In/Ga intermixing at low proton implantation doses (5 × 10 11 ions cm −2 ), giving rise to the coexistence of intermixed and non-intermixed QDs. For higher implantation doses, a decrease of both the PL linewidth and the intersublevel spacing energy have been found to occur, suggesting that the dot-size, dot-composition and dot-strain distributions evolve towards more uniform ones. (Some figures in this article are in colour only in the electronic version)
- Subjects :
- Photoluminescence
Materials science
Proton
Annealing (metallurgy)
Bioengineering
02 engineering and technology
01 natural sciences
Molecular physics
Ion
Laser linewidth
0103 physical sciences
General Materials Science
Photoluminescence excitation
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Electrical and Electronic Engineering
ComputingMilieux_MISCELLANEOUS
010302 applied physics
business.industry
Mechanical Engineering
General Chemistry
021001 nanoscience & nanotechnology
Ion implantation
Mechanics of Materials
Quantum dot
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 13616528 and 09574484
- Volume :
- 19
- Database :
- OpenAIRE
- Journal :
- Nanotechnology
- Accession number :
- edsair.doi.dedup.....dfcce84f80d861e24c33d381cd6d8400