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Temperature-dependent performance of Schottky-Barrier FET ultra-low-power diode
Temperature-dependent performance of Schottky-Barrier FET ultra-low-power diode
- Source :
- Solid-State Electronics, Vol. 184, no.108124, p. 8 (2021)
- Publication Year :
- 2021
- Publisher :
- Elsevier BV, 2021.
-
Abstract
- In this paper, for the first time, we apply the ultra-low-power (ULP) diode concept with Schottky Barrier (SB) transistors and analyze their performance in comparison to standard CMOS, using calibrated TCAD mixed-mode simulations. The negative impedance characteristics obtained in reverse mode with SB devices are shown to offer more stable current characteristics compared to CMOS, especially as a function of temperature. The origin of this behavior manifests itself in the fact that carriers tunneling through the barrier by field emission and carriers overcoming the barrier by thermionic emission both contribute to the total device current. This enables superior current performance over temperature. This enables ultra-low-power memory application over a larger temperature range, or with a denser cell area.
- Subjects :
- 010302 applied physics
Ultra-low-power
Schottky Barrier
SRAM
Diode
Materials science
business.industry
Schottky barrier
Transistor
Thermionic emission
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
Field electron emission
CMOS
law
0103 physical sciences
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
Electrical impedance
Quantum tunnelling
Subjects
Details
- ISSN :
- 00381101
- Volume :
- 184
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi.dedup.....de3619b61eea8ab9e504c80587aa77ad
- Full Text :
- https://doi.org/10.1016/j.sse.2021.108124