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Temperature-dependent performance of Schottky-Barrier FET ultra-low-power diode

Temperature-dependent performance of Schottky-Barrier FET ultra-low-power diode

Authors :
Alexander Kloes
Mike Schwarz
Denis Flandre
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Source :
Solid-State Electronics, Vol. 184, no.108124, p. 8 (2021)
Publication Year :
2021
Publisher :
Elsevier BV, 2021.

Abstract

In this paper, for the first time, we apply the ultra-low-power (ULP) diode concept with Schottky Barrier (SB) transistors and analyze their performance in comparison to standard CMOS, using calibrated TCAD mixed-mode simulations. The negative impedance characteristics obtained in reverse mode with SB devices are shown to offer more stable current characteristics compared to CMOS, especially as a function of temperature. The origin of this behavior manifests itself in the fact that carriers tunneling through the barrier by field emission and carriers overcoming the barrier by thermionic emission both contribute to the total device current. This enables superior current performance over temperature. This enables ultra-low-power memory application over a larger temperature range, or with a denser cell area.

Details

ISSN :
00381101
Volume :
184
Database :
OpenAIRE
Journal :
Solid-State Electronics
Accession number :
edsair.doi.dedup.....de3619b61eea8ab9e504c80587aa77ad
Full Text :
https://doi.org/10.1016/j.sse.2021.108124