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Dose optimization of silicon for boosting arbuscular mycorrhizal fungi colonization and cadmium stress mitigation in maize (Zea mays L.)

Authors :
Ubaid Ullah Zia
Abdul Rehman Niazi
Zahoor Ahmad
Hesham F. Alharby
Ejaz Ahmad Waraich
Asim Abbasi
Muhammad Aamir Iqbal
Sarfraz Ahmed
Shozab Hina
Source :
Environmental Science and Pollution Research. 30:67071-67086
Publication Year :
2023
Publisher :
Springer Science and Business Media LLC, 2023.

Abstract

The foliar applied Silicon (Si) has potential to ameliorate heavy metals especially cadmimum (Cd) toxicity, however Si dose optimization is strategically important for boosting growth of soil microbes and Cd stress mitigation.. Thus, the current research was performed to assess the Si induced physiochemical and antioxidant traits alterations along with Mycorrhizal (VAM) status in maize roots under Cd stress.The trial included foliar Si application at the rate of 0, 5, 10, 15, and 20 ppm while Cd stress was induced after full germination. The response variables included various physiochemical traits such as leaf pigments, protein and sugar contents etc. along with VAM alterations under induced Cd stress. The results revealed that foliage applied Si in higher dose remained effective in improving the leaf pigments,proline, soluble sugar, total proteins, and all free amino acids. Additionally, the same treatment remained unmatched in terms of antioxidant activity compared to lower doses of foliar applied Si.Moreover, VAM was recorded to be at peak under 20 ppm Si treatment. Thus, these encouraging findings may serve as baseline to develop Si foliar application as biologically viable mitigation strategy for maize grown in Cd toxic soils, future studies must test more doses with respect to to varying Cd stress levels along with determining the most responsive crop stage for Si foliar application.

Details

ISSN :
16147499
Volume :
30
Database :
OpenAIRE
Journal :
Environmental Science and Pollution Research
Accession number :
edsair.doi.dedup.....dd2dba5bc52f5163c8553f893c7833a1
Full Text :
https://doi.org/10.1007/s11356-023-26902-9