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Evaluating possibilities of Self-propagating High temperature Synthesis (SHS) for substitution of Ge for Si in MoSi2

Authors :
Katia Favier
Dinesh K. Paramasivam
Florence Rouessac
Didier Ravot
Rose-Marie Ayral
Romain Viennois
Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier (ICGM ICMMM)
Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Institut de Chimie du CNRS (INC)
Source :
Chemistry Letters, Chemistry Letters, Chemical Society of Japan, 2013, pp.10.1246/cl.130528. ⟨10.1246/cl.130528⟩
Publication Year :
2013
Publisher :
HAL CCSD, 2013.

Abstract

International audience; Self-propagating High temperature Synthesis is used to study materials obtained from Mo+Si+Ge system. Si1-xGex is known to be one of the most efficient thermoelectric but its use is limited by high price and scarcity of germanium, relatively low value of its ZT and high temperature of working. One way to increase its ZT consists in increasing the diffusion of the acoustic phonons by inserting silicides nano-inclusions of MoSi2 inside the Si1-xGex matrix. In this sense it is important to study the Mo(Si1-xGex)2 solid solutions.

Details

Language :
English
ISSN :
03667022 and 13480715
Database :
OpenAIRE
Journal :
Chemistry Letters, Chemistry Letters, Chemical Society of Japan, 2013, pp.10.1246/cl.130528. ⟨10.1246/cl.130528⟩
Accession number :
edsair.doi.dedup.....dcc2c3b00acaf423403fc0d29a315819