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Comparison of Characterization Techniques for Measurements of Doping Concentrations in Compensated n-type Silicon
- Source :
- 6th International Conference on Crystalline Silicon Photovoltaics-nPV workshop, 6th International Conference on Crystalline Silicon Photovoltaics-nPV workshop, Mar 2016, Chambéry, France, Energy Procedia, Energy Procedia, 2016, 92, pp.691-696. ⟨10.1016/j.egypro.2016.07.045⟩, Energy Procedia, Elsevier, 2016, 92, pp.691-696. ⟨10.1016/j.egypro.2016.07.045⟩
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- International audience; Nowadays, compensated silicon (Si) is used in photovoltaic (PV) processes, whether it is through intentional co-doping of resistivity-adjusted Czochralski ingots for high efficiency n-type Si solar cells, as a result of alternative Si purification processes for the production of low-cost Si feedstock, or as a result of recycling end-of-life materials. Whatever the origin of the compensated Si, the doping concentrations need to be accurately and quickly characterized in order to control such processes. In this work, a rapid and highly sensitive characterization technique based on low temperature Hall Effect measurements is described in scientific details and compared to three well-established chemical methods: Glow Discharge Mass Spectrometry (GDMS), Inductively-Coupled Plasma Mass Spectrometry (ICP-MS), and Secondary Ion Mass Spectrometry (SIMS). The characterized samples were extracted from the n-type top part of a casted solar grade Si ingot. A very good agreement is observed between the dopants densities extracted from the electrical method and from the standard methods. With the advantage of a very low detection limit combined with a short measurement time, the advanced Hall Effect technique is promising for the rapid and accurate characterization of dopant concentrations in compensated Si.
- Subjects :
- metallurgic
Materials science
Glow Discharge Mass Spectrometry
Silicon
purification
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
recycling
Mass spectrometry
7. Clean energy
01 natural sciences
Energy(all)
0103 physical sciences
Compensated
ICP-MS
characterization
Ingot
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Inductively coupled plasma mass spectrometry
ComputingMilieux_MISCELLANEOUS
010302 applied physics
Dopant
Doping
Hall effect
silicon
021001 nanoscience & nanotechnology
co-doping
Secondary ion mass spectrometry
solar grade
chemistry
0210 nano-technology
SIMS
GDMS
Subjects
Details
- ISSN :
- 18766102
- Volume :
- 92
- Database :
- OpenAIRE
- Journal :
- Energy Procedia
- Accession number :
- edsair.doi.dedup.....dca92005a602ec580edc330914b60fef
- Full Text :
- https://doi.org/10.1016/j.egypro.2016.07.045