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Enhanced light extraction from InGaN/GaN quantum wells with silver gratings
- Source :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2013, 102 (8), pp.081110. ⟨10.1063/1.4794066⟩
- Publication Year :
- 2013
- Publisher :
- AIP Publishing, 2013.
-
Abstract
- International audience; We demonstrate that an extraction enhancement by a factor of 2.8 can be obtained for a GaN quantum well structure using metallic nanostructures, compared to a flat semiconductor. The InGaN/GaN quantum well is inserted into a dielectric waveguide, naturally formed in the structure, and a silver grating is deposited on the surface and covered with a polymer film. The polymer layer greatly improves the extraction compared to a single metallic grating. The comparison of the experiments with simulations gives strong indications on the key role of weakly guided modes in the polymer layer diffracted by the grating.
- Subjects :
- Plasmons
Diffraction
Materials science
Physics and Astronomy (miscellaneous)
Polymers
Thin films
ta221
Physics::Optics
02 engineering and technology
semiconductors
Grating
01 natural sciences
law.invention
[SPI]Engineering Sciences [physics]
Condensed Matter::Materials Science
Optics
law
0103 physical sciences
[CHIM]Chemical Sciences
Thin film
ta216
Gratings
Diffraction grating
ta116
Plasmon
Quantum well
Reflectometry
[PHYS]Physics [physics]
010302 applied physics
ta214
ta213
ta114
business.industry
Physics
diffraction gratings
Transition metals
021001 nanoscience & nanotechnology
Light emitting diodes
Optical waveguides
Quantum wells
Semiconductor
quantum wells
Semiconductors
Optoelectronics
0210 nano-technology
business
Light-emitting diode
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2013, 102 (8), pp.081110. ⟨10.1063/1.4794066⟩
- Accession number :
- edsair.doi.dedup.....dc3ade5359472b2eaa88e466b265b898