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Lu5Ir4Si10 whiskers: Morphology, crystal structure, superconducting and charge density wave transition studies

Authors :
Pierre Rodière
Pierre Bordet
Christine Opagiste
Gaston Garbarino
Sébastien Pairis
Maxime Leroux
Pascal Lejay
Magnétisme et Supraconductivité (MagSup)
Institut Néel (NEEL)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)
European Synchrotron Radiation Facility (ESRF)
Optique et microscopies (POM)
Matériaux, Rayonnements, Structure (MRS)
Cristaux Massifs (CrisMass)
Source :
Journal of Crystal Growth, Journal of Crystal Growth, Elsevier, 2010, 312, pp.3204-3208. ⟨10.1016/J.JCRYSGRO.2010.07.037⟩
Publication Year :
2010
Publisher :
Elsevier BV, 2010.

Abstract

International audience; Highly perfect single crystal whiskers of Lu5Ir4Si10 were successfully grown out of the melt. Details of the surface and morphology of the whiskers are presented. X-ray diffraction data confirmed that the whisker structure has the same tetragonal P4/mbm space group symmetry as bulk single crystals with lattice parameters a=12.484(1) and c=4.190(2) Å. By means of field emission scanning electron microscopy, the morphology of the whiskers has been studied. Using a 4-circle X-ray diffractometer we found that whiskers grow along the c-axis direction and all side faces are oriented along the [1 1 0] direction. The mosaicity has been measured and is found to be almost perfect: below 0.15° along the c-axis. According to our transport measurements performed along the c-axis, the whiskers present a sharp superconducting transition at Tc=4.1 K and show a charge density wave (CDW) transition at 77 K. From the hysteresis of the temperature dependance of the electrical resistivity study, the CDW transition is found to be of first order.

Details

ISSN :
00220248
Volume :
312
Database :
OpenAIRE
Journal :
Journal of Crystal Growth
Accession number :
edsair.doi.dedup.....dbcaf20e1c32ccd43a36582c9d5f071c
Full Text :
https://doi.org/10.1016/j.jcrysgro.2010.07.037