Practical Gate-First Metal Gate/Dual High-k CMOS Integration with Low Threshold Voltages

Authors :: Yasuo Nara
Tetsu Morooka
Tetsuo Ono
Yuzuru Ohji
Nobuyuki Mise
Takahisa Eimori
Takeo Matsuki
Masaru Kadoshima
Motoyuki Sato
Takayuki Aoyama
Satoshi Kamiyama
Source :: ECS Meeting Abstracts. :720-720
Publication Year :: 2008
Publisher :: The Electrochemical Society, 2008.
Abstract: We will give practical and manufacturable solutions for metal gate/dual high-k CMOS fabrication processes with low threshold voltages which are suitable for scaled CMOS device manufacturing.

Subjects :: Materials science
business.industry
NAND gate
Hardware_PERFORMANCEANDRELIABILITY
Dual (category theory)
CMOS
Hardware_GENERAL
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Optoelectronics
business
Metal gate
Hardware_LOGICDESIGN
Voltage
High-κ dielectric

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