High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires

The resistive switching behavior of metal-oxide-metal nanoscale devices is a fascinating phenomenon of next generation nonvolatile memories. Here, we demonstrate nanoscale memristive devices based on Zn(2)SnO(4) nanowires (ZTO NWs) for the first time. The devices show high performance bipolar resistive switching behaviors, including an ultrafast response speed of 20 ns, a low operation voltage of2 V and long data retention (over 5 months). A physical model of metal filament formation along the ZTO NWs has been suggested to explain the bipolar resistive switching behavior.