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Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires
- Source :
- Nanotechnology, Nanotechnology, Institute of Physics, 2012, 23 (39), ⟨10.1088/0957-4484/23/39/395701⟩, Nanotechnology, 2012, 23 (39), ⟨10.1088/0957-4484/23/39/395701⟩
- Publication Year :
- 2012
- Publisher :
- HAL CCSD, 2012.
-
Abstract
- International audience; For most applications, heterostructures in nanowires (NWs) with lattice mismatched materials are required and promise certain advantages thanks to lateral strain relaxation. The formation of Si/Ge axial heterojunctions is a challenging task to obtain straight, defect free and extended NWs. And the control of the interface will determine the future device properties. This paper reports the growth and analysis of NWs consisting of an axial Si/Ge heterostructure grown by a vapor–liquid–solid process. The composition gradient and the strain distribution at the heterointerface were measured by advanced quantitative electron microscopy methods with a resolution at the nanometer scale. The transition from pure Ge to pure Si shows an exponential slope with a transition width of 21 nm for a NW diameter of 31 nm. Although diffuse, the heterointerface makes possible strain engineering along the axis of the NW. The interface is dislocation-free and a tensile out-of-plane strain is noticeable in the Ge section of the NW, indicating a lattice accommodation. Experimental results were compared to finite element calculations.
- Subjects :
- Materials science
Silicon
Nanowire
chemistry.chemical_element
Bioengineering
Germanium
02 engineering and technology
01 natural sciences
Condensed Matter::Materials Science
Strain engineering
0103 physical sciences
General Materials Science
Electrical and Electronic Engineering
010302 applied physics
[PHYS]Physics [physics]
Lateral strain
Condensed matter physics
Mechanical Engineering
Heterojunction
General Chemistry
021001 nanoscience & nanotechnology
Crystallographic defect
Semimetal
Crystallography
chemistry
Mechanics of Materials
0210 nano-technology
Subjects
Details
- Language :
- English
- ISSN :
- 09574484 and 13616528
- Database :
- OpenAIRE
- Journal :
- Nanotechnology, Nanotechnology, Institute of Physics, 2012, 23 (39), ⟨10.1088/0957-4484/23/39/395701⟩, Nanotechnology, 2012, 23 (39), ⟨10.1088/0957-4484/23/39/395701⟩
- Accession number :
- edsair.doi.dedup.....db0069507024f2e0b7dac92820ad6142