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Broadband Photosensitive Medium Based on Amorphous Equichalcogenides

Authors :
Roman Golovchak
Jarres Plummer
Andriy Kovalskiy
Yuriy Holovchak
Tetyana Ignatova
Kyle Nowlin
Anthony Trofe
Yaroslav Shpotyuk
Catherine Boussard-Pledel
Bruno Bureau
Austin Peay State University
University of North Carolina [Greensboro] (UNCG)
University of North Carolina System (UNC)
Ivan Franko National University of Lviv
Rzeszow University of Technology
Institut des Sciences Chimiques de Rennes (ISCR)
Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes)
Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
National Science Foundation (NSF) [OISE-2106457]
Joint School of Nanoscience and Nano-engineering
NSF [ECCS-1542174]
National Nano-technology Coordinated Infrastructure (NNCI)
Source :
Acs Applied Electronic Materials, Acs Applied Electronic Materials, 2022, 4 (11), pp.5397-5405. ⟨10.1021/acsaelm.2c01075⟩
Publication Year :
2022
Publisher :
American Chemical Society (ACS), 2022.

Abstract

International audience; A photosensitive medium based on amorphous equichalcogenide thin films containing germanium and antimony is proposed with characteristics promising for applications in all-chalcogenide photonics, sensors, and photovoltaics. Optical properties, temperature, and exposure wavelength dependence of DC electrical conductivity are shown to be comparable with those for halide perovskites, which potentially makes amorphous equichalcogenides a very attractive alternative. The change in dark resistivity with temperature is found to follow exponential decay, covering 2 orders of magnitude over a 70 K temperature interval. Light exposure leads to several orders of relative changes in a current when compared to its dark value. A strong photocurrent response is observed under low power (milliwatts range) exposure across the entire 400-1000 nm range of the investigated wavelengths. An increase in temperature leads to a decrease in the photoresponse of the developed material, which is found to vanish at temperatures higher than 120 degrees C when only a few milliwatts of exposure power is used.

Details

ISSN :
26376113
Volume :
4
Database :
OpenAIRE
Journal :
ACS Applied Electronic Materials
Accession number :
edsair.doi.dedup.....da8c71cc9f35cbb3e9b0b90c8e0bcf05
Full Text :
https://doi.org/10.1021/acsaelm.2c01075