Ferroelectric and Electrical Properties Optimization of Mg-doped BiFeO3 Flexible Multiferroic Films

Bi1-xMgxFeO3 (BMFO, x = 0, 0.02, 0.04, 0.06 and 0.08) multiferroic films were directly synthesized on flexible stainless steel (FSS), save the bottom electrode process, by means of sol&ndash
gel spin-coating technology. The effects of different bending conditions on ferroelectric, dielectric and leakage-current properties of BMFO films were investigated. The leakage-current densities of BiFeO3 (BFO, x = 0) and BMFO (x = 0.06) films were 5.86 &times
10&minus
4 and 3.73 &times
7 A/cm2, which shows that the BMFO (x = 0.06) has more than three orders of magnitude lower than that of BFO film. The residual polarization (2 Pr) can be enhanced from 120 to 140 &mu
C/cm2. The proper doping of Mg in BiFeO3 film could provide an effective method for reducing the leakage-current values as well as boosting the ferroelectric properties. In this study, the leakage-current mechanism of low electric field and high electric field of BMFO film is analyzed and established. In addition, the flexible BMFO film maintains practical ferroelectric and leakage-current properties at retention time of 106 s under different symmetry bending conditions. These results indicate that the BFMO film will be very practical in opto-electronic and storage device applications.