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Extended scalability and functionalities of MRAM based on thermally-assisted writing

Authors :
Stéphane Auffret
C. Portemont
Ricardo Sousa
Bertrand Cambou
S. Bandiera
J.P. Nozieres
J. Herault
Bernard Dieny
Ioan Lucian Prejbeanu
Clarisse Ducruet
Bernard Rodmacq
K. Mackay
Erwan Gapihan
M. Castro Souza
Source :
2011 International Electron Devices Meeting.
Publication Year :
2011

Abstract

MRAM are already used in low density applications such as microcontrollers or for spatial/avionics applications where they benefit from their radiation hardness. Thermally assisted writing allows extending the downsize scalability of both FIMS and STT-MRAM below the 20nm node. Within a few years, MRAM can play an important role in the memory hierarchy of electronic circuits. They may be first used as DRAM replacement below the 20nm node and in a second step even closer the logic units (Fig.10).

Details

Language :
English
Database :
OpenAIRE
Journal :
2011 International Electron Devices Meeting
Accession number :
edsair.doi.dedup.....d86f6f62f78074d4cf50b725fe7433ba
Full Text :
https://doi.org/10.1109/IEDM.2011.6131471