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Extended scalability and functionalities of MRAM based on thermally-assisted writing
- Source :
- 2011 International Electron Devices Meeting.
- Publication Year :
- 2011
-
Abstract
- MRAM are already used in low density applications such as microcontrollers or for spatial/avionics applications where they benefit from their radiation hardness. Thermally assisted writing allows extending the downsize scalability of both FIMS and STT-MRAM below the 20nm node. Within a few years, MRAM can play an important role in the memory hierarchy of electronic circuits. They may be first used as DRAM replacement below the 20nm node and in a second step even closer the logic units (Fig.10).
- Subjects :
- 010302 applied physics
Magnetoresistive random-access memory
Hardware_MEMORYSTRUCTURES
Memory hierarchy
business.industry
Computer science
Electrical engineering
02 engineering and technology
Avionics
021001 nanoscience & nanotechnology
01 natural sciences
Microcontroller
Hardware_GENERAL
Embedded system
0103 physical sciences
Scalability
Node (circuits)
0210 nano-technology
business
Dram
Electronic circuit
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 2011 International Electron Devices Meeting
- Accession number :
- edsair.doi.dedup.....d86f6f62f78074d4cf50b725fe7433ba
- Full Text :
- https://doi.org/10.1109/IEDM.2011.6131471